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| MA3ZD12W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 Features * Low forward voltage * Allowing high density mounting 1 2 Marking Code: YR Absolute Maximum Ratings (Ta = 25 OC) Parameter Repetitive Peak Reverse Voltage Reverse Voltage Average Forward Current Non-repetitive Peak Forward Surge Current (t = 8.3 ms) Junction Temperature Storage Temperature Range Symbol VRRM VR IF(AV) IFSM TJ Ts Value 25 20 700 2 125 - 55 to + 125 Unit V V mA A O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 700 mA Reverse Current at VR = 20 V Reverse Breakdown Voltage at IR = 600 A Junction Capacitance at VR = 0, f = 1 MHz Symbol VF IR V(BR)R CJ Min. 25 Max. 0.45 200 100 Unit V A V pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 16/05/2008 MA3ZD12W SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 16/05/2008 |
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